Chemical Vapor Deposition of Copper using Nitrogen as Carrier Gas Rajagopal G1,*, Periasamy V M2 1Central Electrochemical Research Institute, Karaikudi – 630 006, India 2B S A R Crescent Engineering College, Chennai, India *Corresponding author: E Mail: dhadi.rajagopal@gmail.com
Online published on 11 June, 2014. Abstract Chemical Vapor Deposition (CVD) of copper was carried out using copper (II) acetylacetonate as the precursor under Nitrogen atmosphere. The synthesis and charecterisation of copper (II) acetylactonate, the precursor has been discussed. The deposition of copper on aluminium was carried out by CVD at different temperatures at a flow rate of 50 ml sec−1 of carrier gas, while the vapourising temperature of the precursor was kept at 200°C. X-ray Diffraction (XRD), electrical resistance and the micro hardness of the deposits are presented. Scanning electron microscopy (SEM) was employed to understand the morphology of the deposits Top Keywords Chemical Vapour deposition, Thin films, X-ray diffraction, Electron Microscopy. Top |
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