Low temperature magnetization and resistivity Studies on 3d-TM substituted at Mn site Bi-Manganite Vijayan D.1, Kurian Joji1, Singh R.1 1School of Physics, University of Hyderabad, Central University P.O., Hyderabad, 500046, India Abstract Manganites are known to be potential candidates in various applications like magnetic refrigeration, sensors, memory storage devices etc. Low temperature studies on these materials provide information about various transitions that the materials undergo caused by the evolution of different magnetic correlations. In this paper the effects of doping 3d-transition elements (TM) (V, Cu and Zn) at the Mn site of Bi0.5Ca0.5Mn0.95M0.05O3, on the ordered states of the material are presented. The data provides the value of Charge Ordering temperature, TCO, and the long range antiferromagnetic (AFM) ordering temperature, TN. Cu and Zn substitution decreases the TCO and melts AFM transition. Whereas, the TCO and TN values remain unchanged in the case of V- substituted sample. Below T ≈ 40 K the temperature independent magnetization is attributed to the freezing of FM inhomogeneities. The temperature dependent resistivity is analyzed using the Mott's and Efros-Shklovskii (ES) variable range hopping (VRH) models. Mott's VRH model is found to provide reasonable values of the model parameters. The data is also analyzed in view of the phase separation (PS) model. Top Keywords Manganties, Transition elements, Magnetization, Resistivity, Phase Separation Topic Code: 502. Top |