International Journal of Management, IT and Engineering
Year : 2016, Volume : 6, Issue : 8
First page : ( 16) Last page : ( 20)
Online ISSN : 2249-0558.

Comparative analysis of Ultra MOSFET with Conventional MOSFET

Gupta Neeraj*, Gupta L.M.**

* Assistant Professor, ECE, ASET

**Assistant Professor, ME, ASET

Online published on 27 February, 2017.

Abstract

UMOSFET is a power MOSFET. It is called UMOS because its gate region is in U shape, the specific on resistance of the UMOS is significantly smaller than its predecessor DMOSFET as the channel density can be increased can be made larger by using a smaller cell pitch. Unlike DMOSFET it does not have a JEFT region which further reduces the on resistance. A high voltage can be supported by the UMOS structure. The breakdown voltage of the UMOS is significantly larger than ordinary MOSFET. Larger N-drift region allows large amount of currents and also reduces the resistance as the area is increased significantly. The bulk which was a sizable portion of n-channel and p-channel MOSFET is quit thin is UMOS, whereas the drain which makes a small portion in MOSFET occupies a significantly large area and play a major role in the reduction of on resistance and withstanding the high value of voltages. Using UMOS is saving 40% free space than using NMOS technology. The electric field in the gate oxide is relatively large in the U-MOSFET structure. In addition, the reverse transfer capacitance for the power U-MOSFET structure is much greater than the NMOS. We are aiming to model a UMOS structure using silvaco and compare its characteristics with an NMOS modeled in silvaco.

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Keywords

MOSFET, VMOSFET, Trench, Silvaco, DMOSFET.

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