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Band Gap Measurement of GaAs Sintered Film from Reflection Spectra Lavkush Department of Physics, R. H. GOVT. P.G. College, Kashipur, Uttarakhand, India Online published on 21 November, 2017. Abstract GaAs is III-V semiconducting direct band gap material. GaAs sintered film is made by sreen printing. Past thus prepared is screen printed on clean glass substrate to get the film. Film is dried in nitrogen atmosphere at 120°C for three hours. Film is baked at 490°C for 15 minutes. Reflection Spectra of sintered film is taken with the help of spectrophotometer. Tauc s formula is used to calculate band gap of material. Top Keywords Band Gap, Reflection Spectra, Absorption Coefficient. Top | |
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