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I-V Characteristic of Gaas Sintered Film Lavkush Department of Physics, R. H. Government P.G. College, Kashipur, Uttarakhand, India Online published on 21 November, 2017. Abstract It is the study of III-V semiconducting alloy thin film. GaAs is important material and used for opto-electronics and solar cell devices, photovoltaics. GaAs sintered film is prepared by screen printing on clean glass substrate. Film is dried in nitrogen atmosphere and baked 480°C for 15 minutes. Ohmic contacts are made at the surface of material to investigate the current behavior of film. Ohmic contacts used in GaAs to improve thermal stability. Top Keywords Ohmic contacts solar cells, current behavior. Top | |
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